256×256 CMOS active pixel sensor camera-on-a-chip
نویسندگان
چکیده
منابع مشابه
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to digital con...
متن کاملCMOS Active Pixel Image Sensor
This paper addresses the development of a micropower 176 144 CMOS active pixel image sensor that dissipates one to two orders of magnitude less power than current state-of-the-art CMOS image sensors. The chip operates from a 1.5-V voltage source and the power consumption measured for the chip running from an internal 25.2-MHz clock yielding 30 frames per second is about 550 W. This amount enabl...
متن کامل256 x 256 CMOS Active Pixel Sensor Camera-on-a-Chip [Brief Paper] - Solid-State Circuits, IEEE Journal of
A CMOS imaging sensor is described that uses active pixel sensor (APS) technology and permits the integration of the detector array with on-chip timing, control, and signal chain electronics. This sensor technology has been used to implement a CMOS APS camera-on-a-chip. The camera-on-a-chip features a 256 x 256 APS sensor integrated on a CMOS chip with the timing and control circuits, and signa...
متن کاملCMOS ACTIVE PIXEL SENSOR FOR A POLARIZATION- DIFFERENCE CAMERA NSF Summer Undergraduate Fellowship in Sensor Technologies
Polarization-sensitive vision is well documented as serving in navigation for many animals, but some types of biological polarization-sensitive vision may enhance object visibility in scattering media. Because neither the human eye nor conventional cameras are polarization-sensitive, artificial polarization vision systems must be designed to exploit the polarization of light; artificial polariz...
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1996
ISSN: 0018-9200
DOI: 10.1109/4.545830